BFN 39 Siemens Semiconductor Group, BFN 39 Datasheet - Page 2

• Manufacturer Part Number: BFN 39
• Description: PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
• Manufacturer: Siemens Semiconductor Group

1)
Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter saturation voltage
I
AC characteristics
Transition frequency
I
Output capacitance
V
Semiconductor Group
C
C
E
C
C
C
C
C
C
C
CB
CB
CB
CB
EB
CB
= 1 mA, I
= 100 A, I
= 100 A, I
= 1 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 20 mA, V
Pulse test conditions: t 300 s, D = 2 %.
A
= 200 V
= 250 V
= 200 V, T
= 250 V, T
= 4 V, I
= 30 V, f = 1 MHz
= 25 ˚C, unless otherwise specified.
C
B
= 0
CE
B
B
= 0
B
B
CE
CE
CE
CE
A
A
= 2 mA
= 2 mA
= 0
= 0
= 10 V
= 150 ˚C
= 150 ˚C
1)
= 10 V
= 10 V
= 10 V
= 10 V, f = 100 MHz
1)
1)
BFN 37
BFN 39
BFN 37
BFN 39
BFN 37
BFN 39
BFN 37
BFN 39
BFN 37
BFN 39
BFN 37
BFN 39
2
Symbol
V
V
V
I
I
h
V
V
C
f
T
CB0
EB0
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
obo
min.
250
300
250
300
5
–
–
–
–
–
25
40
40
30
–
–
–
–
–
Values
100
0
typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.5
max.
–
–
–
–
–
100
100
20
20
100
–
–
–
–
0.4
0.5
0.9
–
–
BFN 37
BFN 39
Unit
V
nA
nA
nA
–
V
MHz
pF
A
A