BD375 Fairchild Semiconductor, BD375 Datasheet
BD375
Manufacturer Part Number
BD375
Description
Medium Power Linear and Switching Applications
Manufacturer
Fairchild Semiconductor
Datasheet
1.BD375.pdf
(4 pages)
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©2000 Fairchild Semiconductor International
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW=350 s, duty Cycle=2% Pulsed
h
V
V
V
I
I
I
P
T
T
V
BV
I
I
h
h
V
V
t
t
FE
C
CP
B
CBO
EBO
ON
OFF
J
STG
FE1
FE2
CBO
CEO
EBO
C
CEO
CE
BE
Symbol
CBO
Symbol
(on)
(sat)
Classification
Classification
(sus)
h
FE1
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Collector-Base
Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Turn ON Time
Turn OFF Time
*Collector Current (Pulse)
Collector-Base Voltage
Collector-Emitter Voltage : BD375
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
40 ~ 100
6
T
C
C
=25 C unless otherwise noted
BD375/377/379
T
=25 C)
: BD377
: BD375
: BD377
: BD379
: BD379
: BD377
: BD379
Parameter
: BD375
: BD375
C
=25 C unless otherwise noted
: BD377
: BD379
: BD375
: BD377
: BD379
63 ~ 160
10
I
I
V
V
V
V
V
V
I
V
V
I
R
C
C
C
B1
CB
CB
CB
EB
CE
CE
CE
CC
L
Test Condition
= 100mA, I
= 100 A, I
= 1A, I
= 60
= - I
= 5V, I
= 45V, I
= 60V, I
= 80V, I
= 2V, I
= 2V, I
= 2V, I
= 30V, I
B2
B
= 0.05A
C
= 0.1A
C
C
C
E
E
E
C
= 0
E
= 0.15A
= 1A
= 1A
B
= 0
= 0
= 0
= 0.5A
= 0
= 0
100 ~ 250
1
1. Emitter
16
Min.
100
- 55 ~ 150
45
60
80
50
75
40
20
Value
100
150
2.Collector
50
75
45
60
80
25
5
2
3
1
Typ.
500
50
TO-126
150 ~ 375
Max.
100
375
1.5
3.Base
25
2
2
2
1
Rev. A, February 2000
Units
W
V
V
V
V
V
V
V
A
A
A
C
C
Units
ns
ns
V
V
V
V
V
V
V
V
A
A
A
A
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BD375 Summary of contents
Page 1
... Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage : BD375 CEO V Emitter-Base Voltage EBO I Collector Current (DC *Collector Current (Pulse Base Current B P Collector Dissipation (T ...
Page 2
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Voltage 100 o Tc[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International 500 V = -2V CE 400 300 200 100 0 1E-3 1000 Figure 2. Collector-Emitter Saturation Voltage 10 1 0.1 0.01 0 125 150 175 200 0.01 0 ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...