UNR9111J Panasonic Semiconductor, UNR9111J Datasheet - Page 15

• Manufacturer Part Number: UNR9111J
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

Characteristics charts of UNR911LJ
Characteristics charts of UNR911MJ
−240
−200
−160
−120
−80
−40
240
200
160
120
80
40
0
6
5
4
3
2
1
0
0
−1
0
0
Collector-emitter voltage V
Collector-emitter voltage V
Collecto-base voltage V
–2
−2
I
– 4
B
C
−4
I
I
= −1.0 mA
C
C
ob
− 0.9 mA
 V
 V
 V
−10
– 6
−6
− 0.8 mA
− 0.7 mA
CE
CE
– 8
CB
− 0.6 mA
−8
I
B
T
f = 1 MHz
I
T
T
E
= −1.0 mA
a
a
CB
a
= 0
− 0.4 mA
− 0.2 mA
= 25°C
− 0.8 mA
− 0.6 mA
= 25°C
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
–10
CE
= 25°C
−10
CE
( V )
( V )
−10
( V )
–12
−12
2
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−1
−1
−10
−1
−2
−1
−1
−2
2
−1
−2
−3
2
−1
−1
−1
Collector current I
Collector current I
Output current I
−25°C
SJH00038BED
25°C
V
V
−10
−1
−10
V
CE(sat)
CE(sat)
T
25°C
T
a
IN
a
= 75°C
= 75°C
 I
 I
 I
−25°C
−10
−10
O
−10
O
C
V
T
C
( mA )
C
C
2
a
I
O
( mA )
I
2
C
( mA )
= 25°C
C
= − 0.2 V
/ I
/ I
B
B
= 10
= 10
−10
−10
−10
3
2
3
500
400
300
200
100
240
200
160
120
80
40
0
0
−1
−1
UNR911xJ Series
Collector current I
Collector current I
25°C
T
−10
−10
a
h
h
= 75°C
FE
FE
−25°C
 I
 I
−10
C
−10
C
C
C
V
V
T
25°C
−25°C
2
2
( mA )
CE
( mA )
CE
a
= 75°C
= −10 V
= −10 V
−10
−10
15
3
3