LMN200B01 Diodes Incorporated, LMN200B01 Datasheet - Page 7

• Manufacturer Part Number: LMN200B01
• Description: 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
• Manufacturer: Diodes Incorporated

DS30651 Rev. 7 - 2
0.001
1.5
0.5
0.01
2.5
0.1
2
1
1
-75 -50 -25
0
Fig. 15
V , BODY DIODE FORWARD VOLTAGE (V)
V
SD
V
Pulsed
GS
GS
= 10V
T , JUNCTION TEMPERATURE (°C)
vs. Body Diode Forward Voltage
= 10V
j
0.5
Fig. 17 Reverse Drain Current
Static Drain-Source On-State Resistance
vs. Junction Temperature
0
V
1
GS
25
= 5V
50
1.5
I = 115mA
75
D
=25
T = 25°C
Pulsed
A
100 125 150
I = 50mA
2
D
C
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2.5
7 of 10
0.001
0.01
0.1
800
700
600
500
400
300
200
100
900
1
0
0
0
T = -55°C
A
Fig. 18 Forward Transconductance
vs. Drain Current (V
T = 25°C
V , SOURCE-DRAIN VOLTAGE (V)
A
SD
Fig. 16 Reverse Drain Current
I , DRAIN CURRENT (A)
0.2
D
T =
vs. Source-Drain Voltage
A
0.5
T = 85°C
85°C
A
T =
A
T = 125°C
T =
A
0.4
A
150°C
DS
25°C
> I R
D
T = 150°C
0.6
DS(ON)
A
T =
T =
1
A
A
Diodes Incorporated
V
Pulsed
125°C
-55°C
LMN200B01
GS
)
= 5V
0.8
1.5