LMN400B01 Diodes Incorporated, LMN400B01 Datasheet - Page 2

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LMN400B01

Manufacturer Part Number
LMN400B01
Description
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET
Manufacturer
Diodes Incorporated
Datasheet
DS30699 Rev. 5 - 2
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Sub-Component Device:
N-MOSFET with Gate Pull-Down Resistor (Q2)
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
Drain-Source Voltage
Drain Gate Voltage (R
Gate-Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
Characteristic
GS
Pulsed (tp <10 uS, Duty Cycle <1%)
Characteristic
1MOhm)
Continuous
Pulsed (tp<50 uS)
Continuous (V
gs
= 10V)
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Symbol
V
V
V
V
CBO
CEO
I
C
cc
in
2 of 10
Symbol
V
V
V
@ T
DGR
GSS
DSS
I
I
D
S
A
= 25 C unless otherwise specified
+5 to -6
@ T
Value
-400
-50
-50
-50
A
= 25 C unless otherwise specified
Value
+/-20
+/-40
115
800
115
60
60
Unit
mA
V
V
V
V
Unit
mA
mA
V
V
V
LMN400B01

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