TPD4105K Toshiba Semiconductor, TPD4105K Datasheet - Page 12

• Manufacturer Part Number: TPD4105K
• Description: High Voltage Monolithic Silicon Power IC
• Manufacturer: Toshiba Semiconductor

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Description of Protection Function
Safe Operating Area
Note 1: The above safe operating areas are at Tj = 135°C (Figure 1).
Note 2: The above safe operating areas include the over-current protection operation area.
(1)
(2)
(3)
2.7
3
0
0
This product incorporates under voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the V
power supply reaches 0.5 V higher than the shutdown voltage (V
is automatically restored and the IGBT is turned on again by the input.
When the V
When the V
typ.)), the IGBT is turned on again by the input signal.
This product incorporates the over-current protection circuit to protect itself against over-current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the RS pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a dead time, preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
Over-current protection
This product incorporates a thermal shutdown circuit to protect itself against excessive rise in
temperature.When the temperature of this chip rises to the internal setting TSD due to external
causes or internal heat generation all IGBT outputs shut down regardless of the input. This
protection function has hysteresis ΔTSD (= 50 °C typ.). When the chip temperature falls to TSD −
ΔTSD, the chip is automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT, for example, the differences in distance between the detection location and the IGBT (the
source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the
temperature of the chip may rise higher than the initial thermal shutdown temperature.
Under-voltage protection
Thermal shutdown
Power supply voltage V
Figure 1 SOA at Tj = 135°C
CC
BS
BS
supply voltage drops V
supply voltage reaches 0.5 V higher than the shutdown voltage (V
power supply falls to this product internal setting V
BB
CC
400
(V)
voltage or the V
450
BS
UVD (=9 V typ.), the high-side IGBT output shuts down.
12
BS
voltage drops.
CC
CC
UVR (=11.5 V typ.)), this product
UVD (=11 V typ.), all IGBT
R
(= 0.5 V typ.), the IGBT
TPD4105K
BS
UVR (=9.5 V
2007-05-10
CC