TPD4113AK Toshiba Semiconductor, TPD4113AK Datasheet - Page 11

• Manufacturer Part Number: TPD4113AK
• Description: Intelligent Power Device High Voltage Monolithic Silicon Power IC
• Manufacturer: Toshiba Semiconductor

Description of Protection Function
Safe Operating Area
Note 1: The above safe operating areas are Tj
(1)
(2)
0.83
0
exceeds thsese, the safe operation areas reduce.
0
Thermal shutdown
This product incorporates the thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD reaches 150°C, all IGBT outputs shut down regardless of the input. This
protection function has hysteresis ( TSD
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
Under voltage protection
This product incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the
V
automatically restored and the IGBT is turned on again by the input.
When the V
When the V
turned on again by the input signal.
TSD, the chip is automatically restored and the IGBT is turned on again by the input.
CC
Power supply voltage V
UVR ( 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is
Figure 1 SOA at Tj
CC
BS
BS
UVR ( 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
supply voltage drops (V
power supply falls to this product internal setting (V
BB
135 C
(V)
CC
voltage or the V
TENTATIVE
450
135 C (Figure 1) and Tc
BS
UVD
11
50 C typ.). When the chip temperature falls to TSD
9 V typ.), the high-side IGBT output shuts down.
BS
0.9
voltage drops.
0
0
Power supply voltage V
Figure 2 SOA at Tc
95 C (Figure 2). If the temperature
CC
UV D
11 V typ.), all IGBT
BB
95 C
TPD4113AK
(V)
2005-05-20
450