FD1500BV-90DA Mitsubishi Electric Semiconductor, FD1500BV-90DA Datasheet - Page 2

• Manufacturer Part Number: FD1500BV-90DA
• Description: HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
I
V
Q
Erec
tb/ta
R
RRM
Fig. 1 (Definition of reverse recovery waveform)
Symbol
FM
th(j-f)
RR
0
IFM
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Thermal resistance
50%IFM
Parameter
ta
trr
IRM
d
tb
90%IRM
i
/d
t
(0~50%IFM)
50%IRM
Q
RR
= (trr
V
I
I
T
With clamp circuit (Refer to Fig. 1 and Fig. 2)
Junction to fin
FM
FM
j
RM
= 125 C
= 3400A, T
= 1500A, d
= 4500V, T
IRM)/2
j
i
/d
j
= 125 C
= 125 C
t
= 1000A/ s, V
Test conditions
Fig. 2 (Reverse recovery test circuit)
R
= 2250V,
L(load)
GCT
HIGH POWER, HIGH FREQUENCY,
D
i
CD
CD
Lc
i
i
Min.
FD1500BV-90DA
—
—
—
—
—
—
Cc
Cc
Limits
Rc
Rc
PRESS PACK TYPE
Typ.
8.0
—
—
—
—
2
D
Cc : 6 F
Rc = 2
Lc = 0.3 H
i
: FD1500BV-90DA
Max.
3600
0.11
150
3.5
—
—
Feb.1999
Unit
mA
J/P
C/W
—
V
C