2MBI100NE-120 Fuji, 2MBI100NE-120 Datasheet - Page 2

• Manufacturer Part Number: 2MBI100NE-120
• Description: IGBT MODULE ( N series )
• Manufacturer: Fuji

1000
250
200
150
100
100
50
10
10
0
8
6
4
2
0
0
0
0
Collector current vs. Collector-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
V
CC
1
Collector-Emitter voltage : V
Switching time vs. Collector current
5
=600V, R
Gate-Emitter voltage : V
50
Collector current : I
2
G
V
10
=9.1 , V
T
GE
T
j
=25°C
=20V,15V,12V,10V
j
=25°C
100
3
GE
15
±15V, T
C
[A]
GE
4
CE
150
[V]
j
[V]
=25°C
20
I
100A
200A
C
50A
=
t
t
t
t
OFF
ON
r
f
5
8V
200
25
1000
250
200
150
100
100
50
10
10
0
8
6
4
2
0
0
0
0
Collector current vs. Collector-Emitter voltage
V
Collector-Emitter vs. Gate-Emitter voltage
CC
Collector-Emitter voltage : V
Switching time vs. Collector current
1
=600V, R
5
Gate-Emitter voltage : V
50
Collector current : I
G
2
=9.1 , V
10
V
T
GE
j
T
=125°C
100
j
=20V,15V,12V,10V
=125°C
3
GE
15
=±15V, T
C
GE
[A]
CE
150
4
[V]
j
[V]
=125°C
20
I
200A
100A
C
50A
=
t
t
t
t
OFF
ON
f
r
5
8V
200
25