2MBI150NE-120 Fuji, 2MBI150NE-120 Datasheet
2MBI150NE-120
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2MBI150NE-120 Summary of contents
Page 1
IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...
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Collector current vs. Collector-Emitter voltage Tj=25°C V =20V,15V,12V,10V G E 300 200 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : ...
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Switching time vs. RG Vcc=600V, Ic=150A, V =±15V, Tj=25° 1000 100 10 Gate resistance : Forward current vs. Forward voltage Tj=125°C 25°C 300 200 100 ...
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... Eon 125°C Eoff 125°C Eon 25°C Eoff 25°C Err 125°C Err 25°C 200 250 300 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Capacitance vs. Collector-Emitter voltage Tj=25°C 100 ...