2MBI300UE-120 FE, 2MBI300UE-120 Datasheet - Page 2

• Manufacturer Part Number: 2MBI300UE-120
• Description: IGBT Module U-Series
• Manufacturer: FE

2MBI300UE-120
Characteristics (Representative)
800
600
400
200
800
600
400
200
100.0
10.0
0
0
1.0
0.1
0.0
0.0
0.0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
1.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1.0
VGE=20V
VGE=0V, f= 1M Hz, Tj= 25°C
T j=25°C
10.0
VGE=15V / chip
2.0
Tj= 25°C / chip
2.0
15V
3.0
T j=125°C
20.0
12V
3.0
Cies
Cres
Coes
4.0
10V
8V
30.0
5.0
4.0
0
800
600
400
200
10.0
8.0
6.0
4.0
2.0
0.0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0.0
0
5.0
200
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=300A, Tj= 25°C
1.0
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
400
10.0
Gate charge : Qg [ nC ]
Tj= 125°C / chip
Tj=25°C / chip
VGE
VGE=20V
VCE
600
2.0
800
15.0
1000 1200 1400 1600
3.0
15V
IGBT Module
20.0
4.0
Ic=600A
Ic=300A
Ic=150A
12V
10V
8V
25.0
5.0