P16NS25 STMicroelectronics, P16NS25 Datasheet
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P16NS25
Manufacturer Part Number
P16NS25
Description
Search -----> STP16NS25
Manufacturer
STMicroelectronics
Datasheet
1.P16NS25.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
P16NS25
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
P16NS25FP
Manufacturer:
KEC
Quantity:
20 000
www.DataSheet4U.com
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
May 2002
STP16NS25
STP16NS25FP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
IDEAL FOR MONITOR’s B+ FUNCTION
Symbol
dv/dt (1)
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
ISO
T
DS
GS
stg
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
N-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FP
(on) = 0.23
250 V
250 V
V
DSS
< 0.28
< 0.28
R
Parameter
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
16 A
16 A
I
D
(1) I
(*) Limited only by maximum temperature allowed
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
16A, di/dt 300 A/ s, V
STP16NS25
TO-220
140
16
11
64
1
-
1
–65 to 150
STP16NS25FP
2
Value
± 20
3
250
250
5
DD
STP16NS25
V
STP16NS25FP
(BR)DSS
16(*)
64(*)
2500
11(*)
0.33
TO-220FP
40
, Tj T
jMAX
1
2
W/°C
Unit
V/ns
3
°C
W
V
V
V
A
A
A
V
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