N02L163WC2A NanoAmp Solutions, N02L163WC2A Datasheet

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N02L163WC2A

Manufacturer Part Number
N02L163WC2A
Description
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
Manufacturer
NanoAmp Solutions
Datasheet
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
Overview
The N02L163WC2A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs
Product Family
N02L163WC2AB2
N02L163WC2AT2
N02L163WC2AB
N02L163WC2AT
Part Number
44 - TSOP II Green
48 - BGA Green
Package Type
44 - TSOP II
o
48 - BGA
C to +85
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
o
C and is
(DOC# 14-02-013 REV G ECN# 01-1270)1
-40
Temperature
Operating
o
C to +85
o
C 2.3V - 3.6V
Features
• Single Wide Power Supply Range
• Very low standby current
• Very low operating current
• Very low Page Mode operating current
• Simple memory control
• Low voltage data retention
• Very fast output enable access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
2.3 to 3.6 Volts
2.0µA at 3.0V (Typical)
2.0mA at 3.0V and 1µs (Typical)
0.8mA at 3.0V and 1µs (Typical)
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Vcc = 1.8V
30ns OE access time
able
Supply
Power
(Vcc)
55ns @ 2.7V
70ns @ 2.3V
N02L163WC2A
Speed
(I
SB
Standby
Current
), Typical
2 µA
www.DataSheet4U.com
2 mA @ 1MHz
Current (Icc),
Operating
Typical

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N02L163WC2A Summary of contents

Page 1

... Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N02L163WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide ...

Page 2

... CE2 I/O UB CE1 I I/O I I I (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com 2 ...

Page 3

... When LB only is in the select mode only I I/O are affected as shown Symbol Test Condition 0V MHz 0V MHz, T I/O IN (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com Input/ Output I/O0 - I/O7 Mux and Buffers I/O8 - I/O15 MODE POWER 2 Standby Standby 2 Standby Standby Standby Standby 3 ...

Page 4

... I SB1 VCC = 3 Vcc = 1.8V Chip Disabled =25°C and not 100% tested. A (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com Rating Unit –0 +0 –0.3 to 4.5 V 500 mW o –40 to 125 C o - 260 ...

Page 5

... SRAMs. The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. N02L163WC2A ) IH Open page ...

Page 6

... Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. N02L163WC2A 2.3 - 3.6 V Symbol Min. Max ...

Page 7

... The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com CE2 = OLZ LBLZ, UBLZ (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com ) IH Data Valid OHZ t t LBHZ, UBHZ Data Valid 7 ...

Page 8

... Data Out Timing Waveform of Write Cycle (CE1 Control) Address CE1 (for CE2 Control, use inverted signal) LB Data In Data Out The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. N02L163WC2A LBW UBW ...

Page 9

... Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 18.41±0.13 11.76±0.20 0.45 0.30 1.10±0.15 0.80mm REF (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com SEE DETAIL ...

Page 10

... PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE e SOLDER BALLS BALL PAD CORNER I. MARKED BY INK 0.75 BALL MATRIX TYPE 0.375 1.125 1.375 FULL (DOC# 14-02-013 REV G ECN# 01-1270) N02L163WC2A www.DataSheet4U.com 1. 0.35±0.05 DIA. 2. SEATING PLANE - Z 0. ...

Page 11

... NanoAmp Solutions, Inc. Ordering Information N02L163WC2AX-XX X Performance Package Type Revision History Revision Date A Jan. 2001 B May 2001 C Sept. 2001 D Dec. 2001 E Nov. 2002 F Oct. 2004 G Nov. 2005 © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. ...

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