N02L6181A ON Semiconductor, N02L6181A Datasheet

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N02L6181A

Manufacturer Part Number
N02L6181A
Description
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
N02L6181AB27I
Manufacturer:
ON Semiconductor
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Part Number:
N02L6181AB28I
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ON Semiconductor
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©2008 SCILLC. All rights reserved.
July 2008 - Rev. 4
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
The N02L6181A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as ON
Semiconductor’s N02L63W3A, which is processed
to operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L6181A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40
+85
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
N02L6181AB2
Part Number
N02L6181AB
o
C and is available in JEDEC standard
Package Type
Green 48-BGA
48 - BGA
-40
Temperature
Operating
o
C to +85
o
C to
o
C 1.65V - 2.2V
Supply
Power
(Vcc)
Features
• Single Wide Power Supply Range
• Very low standby current
• Very low operating current
• Very low Page Mode operating current
• Simple memory control
• Low voltage data retention
• Very fast output enable access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package
1.65 to 2.2 Volts
0.5µA at 1.8V (Typical)
1.4mA at 1.8V and 1µs (Typical)
0.5mA at 1.8V and 1µs (Typical)
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Vcc = 1.2V
30ns OE access time
70 and 85ns
@ 1.65V
Speed
Current (I
Standby
N02L6181A
10 µA
Max
SB
Publication Order Number:
),
3 mA @ 1MHz
Current (Icc),
Operating
www.DataSheet4U.com
Max
N02L6181A/D

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N02L6181A Summary of contents

Page 1

... Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’ ...

Page 2

... N02L6181A Pin Configurations I I I/O I I/O I I I I/O I I ...

Page 3

... N02L6181A Functional Block Diagram Word Address Address Inputs Decode 0 3 Logic Page Address Address Inputs Decode 4 16 Logic CE WE Control OE Logic UB LB Functional Description When UB and LB are in select mode (low), I/O are affected as shown ...

Page 4

... N02L6181A Absolute Maximum Ratings Item Voltage on any pin relative to V Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied ...

Page 5

... N02L6181A Power Savings with Page Mode Operation ( Page Address (A4 - A16 ) Word Address ( LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature ...

Page 6

... N02L6181A Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Power Supply Voltage Operating Temperature Timing Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output ...

Page 7

... N02L6181A Timing of Read Cycle ( Address Previous Data Valid Data Out Timing Waveform of Read Cycle (WE= V Address CE OE LB, UB High-Z Data Out , OLZ LBLZ, UBLZ Rev Page www.onsemi.com www ...

Page 8

... N02L6181A Timing Waveform of Write Cycle (WE control) Address CE LB High-Z Data In Data Out Timing Waveform of Write Cycle (CE Control) Address CE LB Data In Data Out LBW UBW WHZ LBW UBW t WP ...

Page 9

... N02L6181A 44-Lead TSOP II Package (T44) 10.16±0.13 0.80mm REF DETAIL B 0.20 0.00 Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash 18.41±0.13 11.76±0.20 0.45 0.30 1.10±0.15 0.80mm REF Rev Page www.onsemi.com www.DataSheet4U.com SEE DETAIL ...

Page 10

... N02L6181A Ball Grid Array Package D A1 BALL PAD CORNER (3) TOP VIEW K TYP J TYP BOTTOM VIEW Dimensions (mm 6±0.10 8±0.10 0.375 0.28±0.05 1.24±0.10 E SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD SD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING ...

Page 11

... Part Number Package N02L6181AB7I Leaded 48-BGA N02L6181AB27I Green 48-BGA (RoHS Compliant) N02L6181AB8I Leaded 48-BGA N02L6181AB28I Green 48-BGA (RoHS Compliant) N02L6181AB7IT Leaded 48-BGA N02L6181AB27IT Green 48-BGA (RoHS Compliant) N02L6181AB8IT Leaded 48-BGA N02L6181AB28IT Green 48-BGA (RoHS Compliant) Revision History Revision # Date A Apr. 2003 B Nov ...

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