MCM101524 Motorola, MCM101524 Datasheet - Page 2

• Manufacturer Part Number: MCM101524
• Description: 1M x 4 Bit Fast Static Random Access Memory with ECL I/O
• Manufacturer: Motorola

MCM101524
2
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
DC OPERATING CONDITIONS AND SUPPLY CURRENTS
* Address Increment
RISE/FALL TIME CHARACTERISTICS
CAPACITANCE
V EE Pin Potential (to Ground)
Voltage Relative to V CC for Any Pin
Except V EE
Output Current (per I/O)
Power Dissipation
Temperature Under Bias
Operating Temperature
Storage Temperature — Plastic
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Low Current
Input High Current
Chip Select Input Low Current
Operating Power Supply Current: t AVAV = 20 ns (All Outputs Open)*
Quiescent Power Supply Current: f o = 0 MHz (Outputs Open)
Voltage Compensation (V OH )
Voltage Compensation (V OL )
Output Rise Time
Output Fall Time
Input Capacitance
Output Capacitance
S
H
L
L
exceeded. Functional operation should be restricted to the OPERATING CONDI-
TIONS. Exposure to higher than recommended voltages for extended periods of time
could affect device reliability.
W
X
H
L
(X = Don’t Care)
(f = 1.0 MHz, T A = 25 C, Periodically Sampled Rather Than 100% Tested)
Rating
Not Enabled
Operation
Parameter
Read
Write
(V CC = 0 V, V EE = – 5.2 V
Parameter
DC OPERATING CONDITIONS AND CHARACTERISTICS
(See Note)
Data
X
X
X
Parameter
V in , V out
Output
Symbol
T bias
V EE
T stg
I out
P D
Q
T J
L
L
Current
V EE – 0.5 to + 0.5
5%, T J = 0 to + 60 C, Unless Otherwise Noted)
I EE
I EE
—
– 7.0 to + 0.5
– 55 to + 125
Symbol
– 30 to + 85
0 to + 60
t r
t f
Value
– 50
2.0
Test Condition
20% to 80%
20% to 80%
V OH / V EE
V OL / V EE
Address and Data
Symbol
I IL(CS)
I EEQ
V OH
V EE
V OL
Unit
V IH
V IL
I EE
mA
I IH
I IL
W
V
V
C
C
C
S, W
– 1165
– 1810
– 1025
– 1810
– 5.46
Q
– 50
Min
0.5
—
—
—
Min
0.5
0.5
the inputs against damage due to high static
voltages or electric fields; however, it is ad-
vised that normal precautions be taken to
avoid application of any voltage higher than
maximum rated voltages to these high
impedance circuits.
designed to meet the dc and ac specifica-
tions shown in the tables, after thermal equi-
librium has been established. The circuit is
in a test socket or mounted on a printed cir-
cuit board and transverse air flow of at least
500 linear feet per minute is maintained.
Symbol
This device contains circuitry to protect
This BiCMOS memory circuit has been
C out
C ck
C in
35 mV/V @ – 4.94 to – 5.46 V
60 mV/V @ – 4.94 to – 5.46 V
– 5.2
MOTOROLA FAST SRAM
Typ
—
—
—
—
—
—
—
—
—
Typ
1.0
1.0
Typ
3.5
4
4
– 1475
– 1620
– 4.94
– 880
– 880
– 195
– 150
Max
Max
220
170
1.5
1.5
—
Max
7
7
8
Unit
Unit
Unit
mV
mV
mV
mV
mA
mA
ns
ns
pF
pF
V
A
A
A