LTC1157 Linear Technology, LTC1157 Datasheet - Page 5

• Manufacturer Part Number: LTC1157
• Description: 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver
• Manufacturer: Linear Technology

APPLICATIO S I FOR ATIO
MOSFET Selection
The LTC1157 is designed to operate with both standard
and logic level N-channel MOSFET switches. The choice of
switch is determined primarily by the operating supply
voltage.
Logic Level MOSFET Switches at 3.3V
Logic level switches should be used with the LTC1157
when powered from 2.7V to 4V. Although there is some
variation among manufacturers, logic level MOSFET
switches are typically rated with V
continuous V
V
generally little price differential. Logic level MOSFETs are
frequently designated by an “L” and are usually available
in surface mount packaging. Some logic level MOSFETs
are rated up to 15V and can be used in applications which
require operation over the entire 2.7V to 5.5V range.
Standard MOSFET Switches at 5V
Standard N-channel MOSFET switches should be used
with the LTC1157 when powered from 4V to 5.5V supply
as the built-in charge pump produces ample gate drive to
fully enhance these switches when powered from a 5V
nominal supply. Standard N-channel MOSFET switches
are rated with V
maximum of 20V.
Powering Large Capacitive Loads
Electrical subsystems in portable battery-powered equip-
ment are typically bypassed with large filter capacitors to
reduce supply transients and supply induced glitching. If
not properly powered however, these capacitors may
themselves become the source of supply glitching.
For example, if a 100 F capacitor is powered through a
switch with a slew rate of 0.1V/ s, the current during start-
up is:
DS
ratings are similar to standard MOSFETs and there is
I
START
GS
GS
= (100 10
= 10A
= C(dV/dt)
rating of 10V. R
= 10V and are generally restricted to a
U U
– 6
) (1 10
GS
DS(ON)
= 4V with a maximum
W
5
)
and maximum
U
Obviously, this is too much current for the regulator (or
output capacitor) to supply and the output will glitch by as
much as a few volts.
The start-up current can be substantially reduced by
limiting the slew rate at the gate of an N-channel switch as
shown in Figure 1. The gate drive output of the LTC1157
V
is passed through a simple RC network, R1 and C1, which
substantially slows the slew rate of the MOSFET gate to
approximately 1.5
operating as a source follower, the slew rate at the source
is essentially the same as that at the gate, reducing the
start-up current to approximately 15mA which is easily
managed by the system regulator. R2 is required to
eliminate the possibility of parasitic MOSFET oscillations
during switch transitions. Also, it is good practice to
isolate the gates of paralleled MOSFETs with 1k resistors
to decrease the possibility of interaction between switches.
Reverse Battery Protection
The LTC1157 can be protected against reverse battery
conditions by connecting a 300 resistor in series with
the ground pin. The resistor limits the supply current to
less than 12mA with – 3.6V applied. Since the LTC1157
draws very little current while in normal operation, the
drop across the ground resistor is minimal. The 3.3V P
(or control logic) can be protected by adding 10k resistors
in series with the input pins.
IN
ON/0FF
LT1129-3.3
Figure 1. Powering a Large Capacitive Load
IN1
1/2 LTC1157
GND
V
S
+
G1
10
3.3 F
100k
R1
– 4
V/ s. Since the MOSFET is
C1
0.1 F
R2
1k
3.3V
+
LTC1157
MTD3055EL
C
100 F
LOAD
LTC1157 • TA02
LOAD
3.3V
5