LTC4012-2 Linear Technology Corporation, LTC4012-2 Datasheet - Page 4

• Manufacturer Part Number: LTC4012-2
• Description: Multi-Chemistry Battery Charger
• Manufacturer: Linear Technology Corporation

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LTC4012/
LTC4012-1/LTC4012-2
SYMBOL
I
I
INTV
INTV
ΔV
I
Switching Regulator
I
f
f
DC
t
t
t
t
t
PowerPath Control
I
V
V
V
V
V
t
t
Float Voltage Select Inputs (LTC4012-1/LTC4012-2 Only)
V
V
I
Indicator Outputs
V
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4012 is guaranteed to meet performance specifi cations
over the 0°C to 85°C operating temperature range.
Note 3: Operating junction temperature T
the ambient temperature T
4
temperature range, otherwise specifi cations are at T
LEAK-CSP
LEAK-SW
DD
ITH
TYP
MIN
R-TG
F-TG
R-BG
F-BG
NO
DCIN
IF(ON)
IF(OFF)
IN
FTO
FR
RTO
OL(INFET)
OH(INFET)
IL
IH
OL
DD
MAX
DD
DD
Regulator
PARAMETER
CSP Leakage Current
SW Leakage Current
Output Voltage
Load Regulation
Short-Circuit Current (Note 5)
I
Typical Switching Frequency
Minimum Switching Frequency
Maximum Duty Cycle
TGATE Rise Time
TGATE Fall Time
BGATE Rise Time
BGATE Fall Time
TGATE, BGATE Non-Overlap Time
DCIN Input Current
Forward Turn-on Voltage (DCIN Detection Threshold)
Forward Regulation Voltage
Reverse Turn-Off Voltage
INFET Output Low Voltage, Relative to CLP
INFET Output High Voltage, Relative to CLP
INFET Turn-On Time
INFET Turn-Off Time
Input Voltage Low
Input Voltage High
Input Current
Output Voltage Low
TH
Current
A
and the total continuous package power
J
(in °C) is calculated from
A
= 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted.
The
CONDITIONS
SHDN = 0V or DCIN = 0V,
0V ≤ CSP = CSN = BAT ≤ 20V
SHDN = 0V or DCIN = 0V,
0V ≤ SW ≤ 20V
No Load
I
INTV
I
C
C
C
C
C
C
C
0V ≤ DCIN ≤ CLP
DCIN-CLP, DCIN rising
DCIN-CLP
DCIN-CLP , DCIN falling
DCIN-CLP = 0.1V, I
DCIN-CLP = –0.1V, I
To CLP-INFET > 3V, C
To CLP-INFET < 1.5V, C
0V ≤ V
I
DD
TH
LOAD
LOAD
LOAD
LOAD
LOAD
LOAD
LOAD
LOAD
l
= 1.4V
= 20mA
DD
denotes the specifi cations which apply over the full operating
= 100μA, PROG = 1.2V
= 3.3nF
= 3.3nF
= 3.3nF, 10% – 90%
= 3.3nF, 90% – 10%
= 3.3nF, 10% – 90%
= 3.3nF, 90% – 10%
= 3.3nF, 10% – 10%
IN
= 0V
≤ 5V
dissipation P
Applications Information section for details.
Note 4: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND, unless otherwise
specifi ed.
Note 5: Output current may be limited by internal power dissipation. Refer
to the Applications Information section for details.
INFET
INFET
INFET
INFET
D
=1μA
(in watts) by the formula T
=–5μA
= 1nF
= 1nF
l
l
l
l
l
l
l
–250
4.85
–6.5
MIN
467
–10
–45
–10
3.5
–1
–1
50
20
98
15
15
J
= T
–40/+90
A
–0.4
TYP
550
110
–25
2.5
+ (θ
85
25
99
60
50
60
60
25
85
0
0
5
JA
• PD). Refer to the
MAX
5.15
130
633
110
110
110
110
–15
250
180
500
0.5
–1
60
60
35
–5
10
1
2
6
UNITS
4012f
kHz
kHz
mA
mV
mV
mV
mV
mV
μA
μA
μA
μA
μA
ns
ns
ns
ns
ns
μs
μs
%
%
V
V
V
V