MG200F6ES61 Powerex Power Semiconductors, MG200F6ES61 Datasheet - Page 4

• Manufacturer Part Number: MG200F6ES61
• Description: Compact IGBT Series Module
• Manufacturer: Powerex Power Semiconductors

4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG200J6ES61
Six IGBTMOD™
Compact IGBT Series Module
200 Amperes/600 Volts
10
500
400
300
200
100
10
10
10
10
10
10
-1
-2
0
2
1
0
1
0
10
5
0
-3
T
SINGLE PULSE
STANDARD VALUE = R
I
V
V
R
C
C
CC
GE
G
IMPEDANCE CHARACTERISTICS
= 200A
COLLECTOR-EMITTER VOLTAGE
= 25°C
= 200A
500
= 300V
= ±15V
10
T
T
SWITCHING LOSS (ON) VS.
j
j
10
= 25°C
= 125°C
GATE RESISTANCE, R
TRANSIENT THERMAL
GATE CHARGE, Q
GATE RESISTANCE
-2
GATE CHARGE VS.
1000
15
(TYPICAL)
(TYPICAL)
TIME, (s)
(FWDi)
10
-1
1500
th(j-c)
20
G
, (nC)
D = 0.195°C/W
G
, (
10
Ω
2000
25
)
0
2500
10
30
1
10
10
10
10
20
16
12
8
4
0
5
4
3
2
10
0
-2
I
200V
V
f = 1MHz
T
C
GE
C
= 200A
COLLECTOR-EMITTER VOLTAGE
GATE-EMITTER VOLTAGE, V
= 25°C
500
100V
= 0V
GATE-EMITTER VOLTAGE
10
300V
GATE CHARGE, Q
-1
GATE CHARGE VS.
CAPACITANCE VS.
V
1000
CE
(TYPICAL)
(TYPICAL)
= 0V
10
0
1500
G
, (nC)
CE
, (VOLTS)
10
2000
C
C
C
1
ies
oes
res
2500
10
2
10
500
400
300
200
100
10
10
10
-1
-2
0
1
0
10
0
REVERSE BIAS SAFE OPERATION AREA
-3
COLLECTOR-EMITTER VOLTAGE, V
SINGLE PULSE
STANDARD VALUE = R
T
V
R
T
C
GE
j
IMPEDANCE CHARACTERISTICS
G
100
≤ 125°C
= 25°C
= 10Ω
= ±15V
10
TRANSIENT THERMAL
200 300 400 500 600
-2
(TYPICAL)
TIME, (s)
(IGBT)
10
-1
th(j-c)
D = 0.125°C/W
10
CE
0
, (VOLTS)
700
10
1
5/05