RM50 Mitsubishi Electric Semiconductor, RM50 Datasheet - Page 3

• Manufacturer Part Number: RM50
• Description: HIGH SPEED SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVE
1000
10
800
600
400
200
10
10
10
10
10
10
10
MAXIMUM FORWARD CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
–1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
3
2
1
0
10
10
RATED SURGE (NON-REPETITIVE)
V
I
T
0
0
F
0.6
R
=50A
j
2
=25°C
=300/600V
2
3
T
T
4
FORWARD VOLTAGE (V)
j
j
FORWARD CURRENT
3
VS. –di/dt (TYPICAL)
=25°C
=150°C
5
CONDUCTION TIME
7
1.0
(CYCLES AT 60Hz)
4
10
5
–di/dt (A/ s)
1
7
2
1.4
10
3
4
1
5
7
2
10
1.8
2
3
2
4
3
5
I
Q
4
t
2.2
rr
rr
5
rr
7
7
10
10
10
10
10
10
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
–1
MITSUBISHI FAST RECOVERY DIODE MODULES
10
10
10
10
1.0
0.8
0.6
0.4
0.2
REVERSE RECOVERY CHARACTERISTICS
–1
0
10
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
10
VS. FORWARD CURRENT (TYPICAL)
IMPEDANCE (JUNCTION TO CASE)
–3
MAXIMAM TRANSIENT THERMAL
V
di/dt=–100A/µs
0
0
R
2 3 4 5 7
2
2
=300/600V
3
3
FORWARD CURRENT (A)
4
4
5
5
7
7
HIGH SPEED SWITCHING USE
10
10
10
1
–2
1
TIME (s)
2
2
2
3
3
3
4
4
4
5
5
5
RM50HA-XXF
7
7
10
10
–1
2
t
T
T
2
I
Q
2
rr
rr
j
j
INSULATED TYPE
=25°C
=150°C
rr
3
3
4
4
5
5
7
7
10
10
10
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
0
3
2
1
0
–1
Feb.1999