DCR1021SF60 Dynex Semiconductor, DCR1021SF60 Datasheet - Page 8

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DCR1021SF60

Manufacturer Part Number
DCR1021SF60
Description
Phase Control Thyristor Target Information
Manufacturer
Dynex Semiconductor
Datasheet
DCR1021SF
8/11
10000
1000
14
12
10
100
8
6
4
2
0
0
0.1
Conditions:
T
I
V
T
j
R
= 125˚C
= 550A
= 100V
Fig.11 Multiple cycle surge current
Rate of decay of on-state current, dI/dt - (A/µs)
10
Fig.9 Stored charge
Number of cycles @ 50Hz
20
1.0
30
dI/dt
40
10
I
T
Q
50
RA3
Max
Min
I
RR
25% I
RR
60
100
Fig.10 Surge (non-repetitive) on-state current vs time (with
0.001
30
25
20
15
10
0.01
5
0
Fig.12 Maximum (limit) transient thermal impedance -
0.1
0.001
1
I
I
TSM
2
t
2
3
50% V
0.01
junction to case (˚C/W)
4
Pulse width - (ms)
RRM
3 phase 120˚
6 phase 60˚
Conduction
5
Halfwave
at T
Time - (s)
d.c.
6
0.1
case
www.dynexsemi.com
125˚C)
Effective thermal resistance
Double side
7
Junction to case ˚C/W
0.022
0.024
0.026
0.027
Anode side cooled
8
I
2
1.0
t = Î
Double side
9
Anode side
2
cooled
2
x t
0.038
0.040
0.042
0.043
10
0.9
0.75
0.6
0.45
0.3
0.15
0
10

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