DCR1279SD Dynex Semiconductor, DCR1279SD Datasheet
DCR1279SD
Related parts for DCR1279SD
DCR1279SD Summary of contents
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... V & DSM RSM V & 100V DRM RRM respectively See package outline for further information. Half wave resistive load, Half wave resistive load DCR1279SD DCR1279SD Phase Control Thyristor Advance Information DS4643-4.0 January 2000 KEY PARAMETERS V DRM I T(AV) I TSM dVdt* dI/dt *Higher dV/dt selections available Outline type code: D ...
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... DCR1279SD CURRENT RATINGS T = 80˚C unless stated otherwise. case Symbol Parameter Double Side Cooled I Mean on-state current T(AV) I RMS value T(RMS) I Continuous (direct) on-state current T Single Side Cooled (Anode side) I Mean on-state current T(AV) I RMS value T(RMS) I Continuous (direct) on-state current T SURGE RATINGS ...
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... DRM case 5V DRM case 125 C DRM case Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table, fig.4 DCR1279SD Typ. Max. Units - 150 mA - 300 100 200 1. ...
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... DCR1279SD CURVES 3000 Measured under pulse conditions 2500 2000 1500 1000 500 0 1.0 4 125˚C j 1.5 2.0 Instantaneous on-state voltage V Fig.1 Maximum (limit) on-state characteristics 2.5 3.0 - (V) T ...
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... Mean on-state current I Fig.2 Dissipation curves d.c. Half wave 3 phase 1000 1500 - (A) T(AV) DCR1279SD 2000 5/9 ...
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... DCR1279SD 10000 Conditions 1000 100 0.1 100 Table gives pulse power P Pulse width s V 100 FGM 200 500 1ms 10ms 10 1 0.1 0.001 6/9 = 125˚C is total integral stored charge 1.0 Rate of decay of on-state current dI/dt - (A/ s) Fig.3 Stored charge in Watts GM Pulse frequency Hz 50 ...
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... Fig.6 Surge (non-repetitive) on-state current vs time (with 50% V Anode side 0.036 0.038 0.040 0.043 0.1 1 Time - ( Cycles at 50Hz Duration DCR1279SD Anode side cooled Double side cooled 10 800 Î 700 600 500 400 125˚C) RRM ...
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... DCR1279SD PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Cathode tab ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors ...
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... Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4643-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM DCR1279SD 9/9 ...