DCR1674SZ40 Dynex Semiconductor, DCR1674SZ40 Datasheet - Page 4

• Manufacturer Part Number: DCR1674SZ40
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
DCR1674SZ
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
GT
FGN
gd
/I
GM
T
q
L
H
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 1A
t
At T
At T
V
t
I
V
V
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
r
T
= 0.5 s, T
D
R
DR
j
j
DRM
DRM
= 0.5 s, T
= 5000A, t
= 25
= 25
= 67% V
= 200V, dI
vj
vj
= 67% V
RRM
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
T
DRM
case
DRM
j
o
o
= 125
DRM
j
D
g-k
C
C
, T
DRM
p
case
= 125
T
DRM
= 25
case
RR
= 5V
j
= 3ms, T
= 125
=
, Gate source 20V, 10
case
/dt = -5A/ s,
, dV
= 25
= 25
Conditions
to 1100A
o
o
C
C
o
= 125
C
o
DR
o
C, gate open circuit.
Conditions
o
C
C
/dt = 20V/ s linear
j
= 125˚C,
o
C
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
-
-
-
-
-
-
-
-
-
-
0.138
Max.
1000
Max.
0.95
0.25
0.25
150
300
650
220
500
900
500
150
2.5
3.5
30
30
10
5
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s