DCR3990A45 Dynex Semiconductor, DCR3990A45 Datasheet

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DCR3990A45

Manufacturer Part Number
DCR3990A45
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
FEATURES
APPLICATIONS
VOLTAGE RATINGS
DCR3990A52*
DCR3990A50
DCR3990A45
Lower voltage grades available.
*5000V @ -40
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3990A52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
www.dynexsemi.com
Ordering
Part and
Number
Double Side Cooling
High Surge Capability
High Power Drives
High Voltage Power Supplies
Static Switches
o
C, 5200V @ 0
Repetitive Peak
V
DRM
Voltages
5200
5000
4500
and V
V
RRM
o
C
T
I
V
V
V
respectively
DRM
vj
DRM
DSM
DRM
= -40° C to 125° C,
= I
, V
& V
& V
Conditions
RRM
RRM
RSM
RRM
= 300mA,
t
p
=
+ 100V
= 10ms,
KEY PARAMETERS
V
I
I
dV/dt*
dI/dt
* Higher dV/dt selections available
T(AV)
TSM
DRM
(See Package Details for further information)
400A/µs
5200V
3990A
53400A
2000V/µs
Outline type code: A
Phase Control Thyristor
Fig. 1 Package outline
Preliminary Information
DS5940-1.0 March 2009 (LN 26623)
DCR3990A52
www.DataSheet4U.com
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DCR3990A45 Summary of contents

Page 1

... Repetitive Peak Ordering Voltages Number V and V DRM RRM V DCR3990A52* 5200 DCR3990A50 5000 DCR3990A45 4500 Lower voltage grades available *5000V @ -40 C, 5200V @ 0 C ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3990A52 ...

Page 2

SEMICONDUCTOR CURRENT RATINGS T = 60° C unless stated otherwise case Symbol Parameter Double Side Cooled I Mean on-state current T(AV) I RMS value T(RMS) I Continuous (direct) on-state current T SURGE RATINGS Symbol Parameter I Surge (non-repetitive) on-state current ...

Page 3

SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol Parameter I /I Peak reverse and off-state current RRM DRM dV/dt Max. linear rate of rise of off-state voltage dI/dt Rate of rise of on-state current V Threshold voltage – Low level T(TO) Threshold voltage – ...

Page 4

SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter V Gate trigger voltage GT V Gate non-trigger voltage GD I Gate trigger current GT I Gate non-trigger current GD CURVES 9000 min @ 125ºC max @ 125ºC 8000 max @ 25ºC ...

Page 5

SEMICONDUCTOR 12 180 120 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, I Fig.3 On-state power dissipation – sine wave 125 100 ...

Page 6

SEMICONDUCTOR 125 100 75 50 d.c. 180 25 120 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, I Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 16 Double side ...

Page 7

SEMICONDUCTOR 100 Tcase = 125° C Pulse width = 10ms Number of cycles Fig.10 Multi-cycle surge current 25000 0.4762 Qs = 5413.5*(di/dt) max 20000 15000 Qs min 10000 Conditions: Tj= 125º 3100V Rpeak 5000 ...

Page 8

SEMICONDUCTOR 10 Pulse Power Pulse Frequency Hz 50 Width us 100 150 8 200 150 500 150 7 1000 150 10000 125 0.1 0.2 ...

Page 9

SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. www.dynexsemi.com Device 22CT93A 28CT93A 42CT93A DCR3990A52 DCR3220A65 DCR2560A85 Lead length: 420mm Lead terminal connector: M4 ring Package outline type ...

Page 10

... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...

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