DCR760N85 Dynex Semiconductor, DCR760N85 Datasheet - Page 6

• Manufacturer Part Number: DCR760N85
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

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Fig.7 Maximum permissible case temperature,
SEMICONDUCTOR
50
45
40
35
30
25
20
15
10
130
120
110
100
5
0
0.001
90
80
70
60
50
40
30
20
10
double side cooled – rectangular wave
0
0
Mean on-state current, I
0.01
Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW)
500
0.1
Time ( s )
1000
1
Cathode
Double Side
Cooled
T(AV)
1500
- (A)
10
d.c.
180
120
90
60
30
Anode.
2000
100
Double side cooled
Anode side cooled
Cathode side cooled
Z
Tables show the increments of thermal resistance R
operates at conduction angles other than d.c.
180
120
90
60
30
15
th
R
°
th(j-c)
=
Double side cooling
Fig.8 Maximum permissible heatsink temperature,
130
120
110
100
[R
90
80
70
60
50
40
30
20
10
Conduction
sine.
2.25
2.60
2.98
3.32
3.59
3.71
0
i
x ( 1-exp. (t/T
0
double side cooled – rectangular wave
Z
th
(z)
rect.
1.53
2.19
2.55
2.94
3.37
3.60
Mean on-state current, I
R
T
R
T
R
T
i
i
i
i
i
i
i
))]
(s)
(s)
(s)
(° C/kW)
(° C/kW)
(° C/kW)
180
120
500
90
60
30
15
°
Anode Side Cooling
[1]
sine.
2.23
2.57
2.94
3.27
3.53
3.65
0.009195 0.057825
0.010286 0.064874
0.010861 0.069332 0.464312
1.2849
1.4937
1.6042
Z
1
th
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(z)
rect.
1.52
2.16
2.52
2.90
3.32
3.53
1000
5.1268
2
th(j-c)
4.988
5.285
T(AV
180
120
when the device
Cathode Sided Cooling
90
60
30
15
) - (A)
°
0.43183
0.49207
DCR760N85
5.5614
6.8498
5.0921
d.c.
180
120
90
60
30
sine.
3
2.22
2.56
2.92
3.25
3.50
3.62
1500
Z
th
(z)
24.2935
rect.
1.52
2.15
2.51
2.88
3.29
3.51
8.3856
1.3814
7.2582
33.032
4
6.671