DCR820SG Dynex Semiconductor, DCR820SG Datasheet
DCR820SG
Related parts for DCR820SG
DCR820SG Summary of contents
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... Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR820SG62 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. www.dynexsemi.com ...
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... DCR820SG CURRENT RATINGS T = 60˚C unless stated otherwise case Symbol Parameter Double Side Cooled I Mean on-state current T(AV) I RMS value T(RMS) I Continuous (direct) on-state current T Single Side Cooled (Anode side) I Mean on-state current T(AV) I RMS value T(RMS) I Continuous (direct) on-state current T CURRENT RATINGS T = 80˚ ...
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... T = 125 C case Conditions dc Double side cooled Anode dc Single side cooled Cathode dc Double side Clamping force 12.0kN with mounting compound Single side On-state (conducting) Reverse (blocking) DCR820SG Max. Units 4 115 6 180 Min. Max. ...
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... DCR820SG DYNAMIC CHARACTERISTICS Symbol Parameter I /I Peak reverse and off-state current RRM DRM dV/dt Maximum linear rate of rise of off-state voltage dI/dt Rate of rise of on-state current V Threshold voltage T(TO) r On-state slope resistance T t Delay time gd I Latching current L I Holding current H t Turn-off time q Stored charge - triangular approximation ...
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... www.dynexsemi.com 600 T = 125˚C j 500 400 300 200 100 0 1 5.0 6.0 7.0 - (V) T Fig.3 Maximum (limit) on-state characteristics Where B = 0.639225 C = 0.004376 D = -0.092153 these values are valid for T DCR820SG 1.5 2.5 3 3.5 2.0 Instantaneous on-state voltage ( -0.759775 = 125˚C for I 100A to 1500A 5/10 ...
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... DCR820SG 2000 1800 1600 1400 1200 1000 800 600 400 200 100 150 200 Mean on-state current, I Fig.4 Sine wave power dissipation curves 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 Mean on-state current, I Fig ...
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... Pulse Width T = -40˚ 25˚C j 0.3 0.4 0.5 0.6 Gate trigger current (A) GT Fig.8 Gate characteristics Gate trigger current (A) GT Fig.9 Gate characteristics DCR820SG in Watts GM Frequency Hz 50 100 400 s 150 150 150 100 200 150 150 125 150 150 100 500 150 100 25 ...
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... DCR820SG 10000 Conditions 125˚ 320A 100V R 1000 100 0.1 1.0 Rate of decay of on-state current, dI/dt - (A/ s) Fig.10 Stored charge 12 Cycles at 50Hz Duration Fig.12 Surge (non-repetitive) on-state current vs time (with 50 RRM case 8/10 1000 Conditions 125˚C ...
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... DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode tab Ø1.5 Gate www.dynexsemi.com Cathode Ø58.5 max Ø34 nom Ø34 nom Nominal weight: 250g Clamping force: 12kN 10% Lead lenght: 420mm Lead terminal connector: M4 ring Package outline type code: G DCR820SG Anode 9/10 ...
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... DCR820SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors ...