DCR840F44 Dynex Semiconductor, DCR840F44 Datasheet - Page 6

• Manufacturer Part Number: DCR840F44
• Description: Phase Control Thyristor Preliminary Information
• Manufacturer: Dynex Semiconductor

DCR840F
6/9
10000
V
100
0.1
1000
GD
10
0.001
100
1
Pulse width
1
10ms
1ms
100
200
500
µs
Maximum
Minimum
Rate of rise of on-state current, dI/dt - (A/µs)
150
150
150
150
50
20
Frequency Hz
Fig.6 Gate characteristics
0.01
Fig.4 Recovered charge
100
150
150
150
Gate trigger current, I
50
-
400
150
125
100
25
-
Table gives pulse power P
0.1
10
GT
- (A)
Region of certain
1
triggering
GM
in Watts
10
100
1000
0.001
100
0.01
10
Fig.6 Transient thermal impedance - junction to case
0.1
0.001
1
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
d.c.
Maximum
Minimum
Rate of rise of on-state current, dI/dt - (A/µs)
Fig.5 Reverse recovery current
0.01
Double side
Effective thermal resistance
0.022
0.024
0.026
0.027
Junction to case ˚C/W
Time - (s)
Anode side
10
0.038
0.040
0.042
0.043
0.1
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Double side cooled
Anode side cooled
1.0
100
10