TB3500H Diodes Incorporated, TB3500H Datasheet - Page 2

• Manufacturer Part Number: TB3500H
• Description: (TB0640H - TB3500H) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
• Manufacturer: Diodes Incorporated

Notes:
DS30360 Rev. 3 - 2
Electrical Characteristics
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
Part Number
1. I
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
recovery time does not exceed 30ms.
H
> (V
Repetitive
Off-State
V
L
Voltage
/R
Rated
DRM
120
140
160
190
220
275
320
L
58
65
75
90
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
(V)
Symbol
V
I
V
V
Current @
DRM
I
I
I
C
V
Off-State
DRM
I
BO
I
Leakage
BR
PP
DRM
BR
BO
H
O
T
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@ T
Breakover
Voltage
V
BO
130
160
180
220
265
300
350
400
A
77
88
98
= 25 C unless otherwise specified
(V)
I
BR
@ I
On-State
Voltage
V
I
T
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
DRM
I
I
I
BO
(V)
PP
H
= 1A
RMS
I
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
2 of 4
V
signal, V
T
(mA)
Min
50
50
50
50
50
50
50
50
50
50
50
Breakover
Current
R
I
BO
Max (mA)
= 2V
V
800
800
800
800
800
800
800
800
800
800
800
DRM
DC
bias.
V
BR
V
Holding Current
(mA)
BO
150
150
150
150
150
150
150
150
150
150
150
Min
V
NOTE: 1
NOTE: 2
Parameter
I
H
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Capacitance
Off-State
C
O
TB0640H - TB3500H
200
200
200
120
120
120
120
80
80
80
80
(pF)
Marking
T064H
T072H
T090H
T110H
T130H
T150H
T180H
T230H
T260H
T310H
T350H
Code