OM60N06ST Omnirel, OM60N06ST Datasheet

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OM60N06ST

Manufacturer Part Number
OM60N06ST
Description
(OM60N0xSx) POWER MOSFETS
Manufacturer
Omnirel
Datasheet
1.OM60N06ST.pdf (7 pages)
LOW VOLTAGE, LOW R
IN HERMETIC ISOLATED PACKAGE
4 11 R1
Supersedes 3 02 R0
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low R
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS
OM60N06SA
OM50N06SA
OM50N06ST
OM60N05SA
OM50N05SA
OM50N05ST
PART NO.
Gate
SCHEMATIC
Source
Drain
DS(on)
50V And 60V Ultra Low R
Power MOSFETs In TO-257 And TO-254
Isolated Packages
V
DS
60
60
60
50
50
50
(V)
R
(Per Device)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
DS(on)
CONNECTION
.025
.030
.035
.025
.030
.035
3.1 - 65
DS(on)
( )
T-3 PIN
1 2 3
POWER MOSFETS
I
D
60
50
50
60
50
50
(A)
O M 6 0 N 0 6 S A
O M 5 0 N 0 6 S A
DS(on)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
CONNECTION
M-PAK PIN
TO-254AA
TO-254AA
TO-257AA
TO-254AA
TO-254AA
TO-257AA
O M 6 0 N 0 5 S A
O M 5 0 N 0 5 S A
Package
1
2
3
O M 5 0 N 0 6 S T
O M 5 0 N 0 5 S T
3.1

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OM60N06ST Summary of contents

Page 1

LOW VOLTAGE, LOW R IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low R Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • Isolated Hermetic Metal Packages • Ultra Low R DS(on) • Low Conductive Loss/Low Gate Charge • ...

Page 2

OM60N06SA - OM50N05ST ABSOLUTE MAXIMUM RATINGS (T Parameter V Drain-Source Voltage DS V Drain-Gate Voltage (R DGR V Gate-Source Voltage, Continuous 25°C Continuous Drain Current 100°C Continuous Drain Current ...

Page 3

OM60N06SA - OM50N05ST 3 3.1 ...

Page 4

OM60N06SA - OM50N05ST 3.1 3 ...

Page 5

OM60N06SA - OM50N05ST 3 3.1 ...

Page 6

OM60N06SA - OM50N05ST Switching Times Test Circuits For Resistive Load Gate Charge vs Gate-Source Voltage 3.1 Normalized Gate Threshold Voltage vs Temperature Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time TYPICAL CHARACTERISTICS Capacitance Variations Normalized On Resistance ...

Page 7

...

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