MBM29DL32TF Fujitsu, MBM29DL32TF Datasheet - Page 40

• Manufacturer Part Number: MBM29DL32TF
• Description: 32M-Bit Dual Operation Flash Memory
• Manufacturer: Fujitsu

23. Write Pulse “Glitch” Protection
24. Logical Inhibit
25. Power-Up Write Inhibit
26. Sector Group Protection
unintentional writes when V
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector (s) cannot be used.
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Writing is inhibited by holding any one of OE
must be a logic zero while OE is a logic one.
Power-up of the devices with WE
The internal state machine is automatically reset to the read mode on power-up.
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both program and erase commands that are addressed to protected sectors. Any commands to program or
erase addressed to protected sector are ignored. (See “8. Sector Group Protection” in
SCRIPTION.)
CC
is above V
CE
LKO
V
IL
.
and OE
V
IL
, CE
V
IH
V
will not accept commands on the rising edge of WE.
IH
, or WE
MBM29DL32TF/BF
V
IH
. To initiate a write cycle CE and WE
FUNCTIONAL DE-
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