rq1a070zp ROHM Co. Ltd., rq1a070zp Datasheet

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rq1a070zp

Manufacturer Part Number
rq1a070zp
Description
1.5v Drive Pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RQ1A070ZP
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
rq1a070zp(P)
Manufacturer:
ROHM
Quantity:
30 000
1.5V Drive Pch MOSFET
Silicon P-channel MOSFET
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
Switching
<It is the same ratings for Tr1 and Tr2.>
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Channel to ambient
Source current
(Body diode)
∗ Mounted on a ceramic board.
c
www.rohm.com
Type
RQ1A070ZP
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
RQ1A070ZP
2009 ROHM Co., Ltd. All rights reserved.
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
83.3
150
−12
±10
±28
−28
1.5
±7
−1
1/4
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
Inner circuit
TSMT8
Abbreviated symbol : YJ
(8)
(1)
∗2
(7)
(2)
(8) (7)
(1) (2)
∗1
(6)
(3)
(6)
(3)
(5)
(4)
(5)
(4)
2009.08 - Rev.A
Each lead has same dimensions
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

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rq1a070zp Summary of contents

Page 1

... High power package. Applications Switching Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 RQ1A070ZP Absolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Source current Continuous (Body diode) ...

Page 2

... RQ1A070ZP Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS −12 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance Y fs Input capacitance C iss ...

Page 3

... RQ1A070ZP Electrical characteristics curves 10 Ta=25 ℃ -10V GS Pulsed V = -4. -2. -1. -1. =-1. =-1. 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical output characteristics( Ⅰ ) 1000 Ta=25 ℃ Pulsed V = -1. -1. -2.5V 100 -4. 0.1 1 DRAIN CURRENT : -I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) ...

Page 4

... RQ1A070ZP 10 Ta=125°C Ta=75°C Ta=25°C 1 Ta=-25°C 0.1 V =0V GS Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 5 Ta=25 ℃ - - =10Ω G Pulsed TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Measurement circuits ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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