rjp30h1dpd Renesas Electronics Corporation., rjp30h1dpd Datasheet - Page 4

• Manufacturer Part Number: rjp30h1dpd
• Description: Silicon N Channel Igbt High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJP30H1DPD
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
10000
1000
1000
1000
100
100
100
10
10
10
1
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (3)
Colloctor to Emitter Voltage V
1
0
0
V
Ta = 25°C
I
R
C
GE
L
Colloctor to Emitter Voltage
Case Temperature Tc (°C)
= 30 A, V
25
= 5 Ω, Rg = 5 Ω
Colloctor Current I
= 0 V, f = 1 MHz
Typical Capacitance vs.
20
t d(off)
t d(on)
t f
t r
50
Rg = 5 Ω, Ta = 25°C
t d(off)
t d(on)
V
GE
40
CC
t r
t f
= 15 V
= 150 V, V
75
10
60
100
GE
C
80
(A)
125
= 15 V
Cies
Coes
Cres
CE
(V)
100
150
100
1000
800
600
400
200
100
10
0
Dynamic Input Characteristics (Typical)
Switching Characteristics (Typical) (2)
1
0
V
I
Ta = 25°C
C
I
R
C
CC
L
= 30 A
= 30 A, V
t d(off)
t d(on)
= 5 Ω, Ta = 25°C
Gate Resistance Rg (Ω)
V
= 150 V
8
Gate Charge Qg (nC)
t f
t r
CE
GE
16
= 15 V
10
24
V
GE
32
Preliminary
100
40
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