spp3401w Sync Power Corp, spp3401w Datasheet

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spp3401w

Manufacturer Part Number
spp3401w
Description
P-channel Logic Enhancement Mode Power Field Effect Transistors
Manufacturer
Sync Power Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
spp3401w/SPP3401
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
spp3401wS23RG
Manufacturer:
SYNCPOWER
Quantity:
20 000
2011/06/01
DESCRIPTION
The SPP3401W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
-30V/-4.0A,R
-30V/-3.2A,R
-30V/-1.2A,R
Super high density cell design for extremely low
R
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
DS (ON)
Preliminary
SPP3401W
P-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
= 70mΩ@V
= 90mΩ@V
= 115mΩ@V
GS
GS
GS
=- 10V
=-4.5V
=-2.5V
APPLICATIONS
PIN CONFIGURATION(SOT-23)
PART MARKING
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
S41WYW
Page 1

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spp3401w Summary of contents

Page 1

... SPP3401W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ...

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... SPP3401W P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP3401WS23RG ※ Week Code : ※ SPP3401WS23RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Un less otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage ...

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... SPP3401W P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless othe rwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge ...

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... SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Preliminary 2011/06/01 Page 4 ...

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... SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Preliminary 2011/06/01 Page 5 ...

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... SPP3401W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Preliminary 2011/06/01 Page 6 ...

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... SPP3401W P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE Preliminary 2011/06/01 Page 7 ...

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... SPP3401W P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice ...

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