spa-1526z Sirenza Microdevices, spa-1526z Datasheet

spa-1526z

Manufacturer Part Number

spa-1526z

Description

2140 Mhz 1 Watt Power Amp With Active Bias

Manufacturer

Sirenza Microdevices

Datasheet

1.SPA-1526Z.pdf (14 pages)

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Product Description

RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar

Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs

device technology and fabricated with MOCVD for an ideal combination of low cost

and high reliability. It is well suited for use as a driver stage in macro/micro-cell

infrastructure equipment, or as the final output stage in pico-cell infrastructure

equipment. It features an input power detector, on/off power control, ESD protec-

tion, excellent overall robustness, and a hand reworkable and thermally enhanced

SOF-26 package.

EDS-105847 Rev D

Small Signal Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

WCDMA Channel Power

Input Return Loss

Output Return Loss

Noise Figure

Quiescent Current (V

Operating Voltage

Operating Current (V

Power Up Control Current (V

Thermal Resistance (junction to lead)

Test Conditions: V

Optimum Technology

Matching® Applied

Leakage Current (V

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

-65dBc ACP

-55dBc ACP

-65dBc ACP

-55dBc ACP

-65dBc ACP

-55dBm ACP

Parameter

=5V

=5V), Quiescent

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

=5V)

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

=5V, V

=5V)

=645mA Typ.

=0V)

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SPA-1526Z

0.7GHz to

2.2GHz 2W

InGaP HBT

Amplifier

-35.0

-40.0

-45.0

-50.0

-55.0

-60.0

-65.0

-70.0

-75.0

10.0

Preliminary

=25°C

ACP versus Channel Power, Over Frequency,

Min.

12.0

Specification

14.0

880MHz

1960MHz

2140MHz

=50Ω

Typ.

15.4

14.0

13.5

32.5

32.0

45.5

49.0

16.5

20.7

18.6

22.3

18.4

21.3

20.0

14.5

12.0

645

16.0

5.5

5.0

2.1

WCDMA

OUT

(dBm)

18.0

20.0

0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Max.

100

5.5

22.0

24.0

RFMD Green, RoHS Compliant, Pb-Free Product

Unit

°C/W

dBm

μA

885MHz

1960MHz

2140MHz

885MHz

1960MHz

2140MHz

885MHz

1960MHz

2140MHz

3GPP 3.5, test model 1, 64 DPCH

885MHz

1960MHz

2140MHz

1960MHz

Features

Applications

ACP=-65dBc with 18.4dBm

Channel Power @ 2140MHz

Low Thermal Resistance

Package

Power Up/Down Control<1μs

Robust Class 1C ESD

Macro/Micro-Cell Driver

Stage

Pico-Cell Output Stage

GSM, CDMA, TDSCDMA,

WCDMA, IS-95

Single and Multi-Carrier Appli-

cations

1dB

SPA-1526Z

=32dBm @ 2140MHz

Condition

Package: SOF-26

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