atp301 Sanyo Semiconductor Corporation, atp301 Datasheet - Page 2

• Manufacturer Part Number: atp301
• Description: P-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
0.8
1
2.3
Parameter
6.5
4
2
2.3
V IN
50Ω
G
3
0.6
V DD = --60V
D
S
0.55
I D = --14A
R L =4.3Ω
ATP301
0.4
| yfs |
R DS (on)
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
1.5
Symbol
V OUT
0.4
V DS =--10V, I D =--14A
I D =- -14A, V GS =--10V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--60V, V GS =--10V, I D =--28A
V DS =--60V, V GS =--10V, I D =--28A
V DS =--60V, V GS =--10V, I D =--28A
I S =--28A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
ATP301
4.6
2.6
Avalanche Resistance Test Circuit
Conditions
0.4
--10V
0V
50Ω
≥50Ω
RG
min
Ratings
typ
4000
--1.0
270
150
130
330
190
57
32
73
16
14
32
ATP301
L
max
--1.5
75
No. A1457-2/4
Unit
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V DD