tn28f010-90 Intel Corporation, tn28f010-90 Datasheet - Page 4

• Manufacturer Part Number: tn28f010-90
• Description: 1024k 128k X 8 Cmos Flash Memory
• Manufacturer: Intel Corporation

28F010
APPLICATIONS
The 28F010 flash memory provides nonvolatility
along with the capability to perform over 100 000
electrical chip-erasure reprogram cycles These fea-
tures make the 28F010 an innovative alternative to
disk EEPROM and battery-backed static RAM
Where periodic updates of code and data-tables are
required the 28F010’s reprogrammability and non-
volatility make it the obvious and ideal replacement
for EPROM
Primary applications and operating systems stored
in flash eliminate the slow disk-to-DRAM download
process This results in dramatic enhancement of
performance and substantial reduction of power
consumption
tant in portable equipment Flash memory increases
flexibility with electrical chip erasure and in-system
update capability of operating systems and applica-
tion code With updatable code system manufactur-
ers can easily accommodate last-minute changes as
revisions are made
In diskless workstations and terminals network traf-
fic reduces to a minimum and systems are instant-
on Reliability exceeds that of electromechanical
media Often in these environments power interrup-
tions force extended re-boot periods for all net-
worked terminals This mishap is no longer an issue
if boot code operating systems communication pro-
tocols and primary applications are flash-resident in
each terminal
For embedded systems that rely on dynamic RAM
disk for main system memory or nonvolatile backup
storage the 28F010 flash memory offers a solid
state alternative in a minimal form factor The
28F010 provides higher performance lower power
consumption instant-on capability and allows an
‘‘execute in place’’ memory hierarchy for code and
data table reading Additionally the flash memory is
more rugged and reliable in harsh environments
where extreme temperatures and shock can cause
disk-based systems to fail
The need for code updates pervades all phases of a
system’s life
ture to after-sale service The electrical chip-erasure
and reprogramming ability of the 28F010 allows in-
circuit alterability this eliminates unnecessary han-
dling and less-reliable socketed connections while
adding greater test manufacture and update flexi-
bility
4
from prototyping to system manufac-
a consideration particularly impor-
Material and labor costs associated with code
changes increases at higher levels of system inte-
gration
sale Code ‘‘bugs’’ or the desire to augment system
functionality prompt after-sale code updates Field
revisions to EPROM-based code requires the re-
moval of EPROM components or entire boards With
the 28F010 code updates are implemented locally
via an edge-connector or remotely over a commun-
cation link
For systems currently using a high-density static
RAM battery configuration for data accumulation
flash memory’s inherent nonvolatility eliminates the
need for battery backup The concern for battery
failure no longer exists an important consideration
for portable equipment and medical instruments
both requiring continuous performance In addition
flash memory offers a considerable cost advantage
over static RAM
Flash memory’s electrical chip erasure byte pro-
grammability and complete nonvolatility fit well with
data accumulation and recording needs Electrical
chip-erasure gives the designer a ‘‘blank slate’’ in
which to log or record data Data can be periodically
off-loaded for analysis and the flash memory erased
producing a new ‘‘blank slate’’
A high degree of on-chip feature integration simpli-
fies memory-to-processor interfacing Figure 4 de-
picts two 28F010s tied to the 80C186 system bus
The 28F010’s architecture minimizes interface cir-
cuitry needed for complete in-circuit updates of
memory contents
The outstanding feature of the TSOP (Thin Small
Outline Package) is the 1 2 mm thickness With stan-
dard and reverse pin configurations TSOP reduces
the number of board layers and overall volume nec-
essary to layout multiple 28F010s TSOP is particu-
larly suited for portable equipment and applications
requiring large amounts of flash memory Figure 3
illustrates the TSOP Serpentine layout
With cost-effective in-system reprogramming ex-
tended cycling capability and true nonvolatility
the 28F010 offers advantages to the alternatives
EPROMs EEPROMs battery backed static RAM
or disk EPROM-compatible read specifications
straight-forward interfacing and in-circuit alterability
offers designers unlimited flexibility to meet the high
standards of today’s designs
the most costly being code updates after