ipp320n20n3g Infineon Technologies Corporation, ipp320n20n3g Datasheet

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OptiMOS TM 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Halogen-free ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

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Power dissipation =f tot C 160 140 120 100 Safe operating area =f =25 ° parameter ...

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Typ. output characteristics =f =25 ° parameter Typ. transfer characteristics =f |>2|I |R ...

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Drain-source on-state resistance = DS(on 100 -60 - Typ. capacitances C =f MHz DS GS ...

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Avalanche characteristics =25 Ω =f parameter: T j(start) 100 Drain-source breakdown voltage =f BR(DSS 230 220 210 200 190 180 ...

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PG-TO220-3: Outline Rev. 2.2 IPB320N20N3 G page 8 IPP320N20N3 G IPI320N20N3 G 2009-10-22 ...

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PG-TO263-3: Outline Rev. 2.2 IPB320N20N3 G page 9 IPP320N20N3 G IPI320N20N3 G 2009-10-22 ...

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PG-TO262-3: Outline Rev. 2.2 IPB320N20N3 G page 10 IPP320N20N3 G IPI320N20N3 G 2009-10-22 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...