ipp100n08n3g Infineon Technologies Corporation, ipp100n08n3g Datasheet - Page 6

• Manufacturer Part Number: ipp100n08n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
20
15
10
DS
=f(T
5
0
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=46 A; V
20
20
Crss
Coss
Ciss
GS
max
V
=10 V
T
j
DS
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPP100N08N3 G IPI100N08N3 G
=V
0.5
DS
20
175 °C
46 µA
V
T
SD
j
25 °C, max
60
[°C]
1
[V]
460 µA
25 °C
IPB097N08N3 G
100
175 °C, max
1.5
140
2008-12-05
180
2