ipp015n04ng Infineon Technologies Corporation, ipp015n04ng Datasheet - Page 3

• Manufacturer Part Number: ipp015n04ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=30 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=20 V, V
=20 V, I
=0 to 10 V
=0 to 10 V
=20 V, V
=0 V, I
F
F
G
DS
=100 A,
=I
D
=1.6 Ω
GS
GS
=100 A,
=20 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
15000
4000
0.88
typ.
160
188
177
147
141
5.0
40
10
64
13
76
46
23
75
-
-
IPB015N04N G
IPP015N04N G
20000 pF
max.
5300
250
120
400
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
V
nC
A
V
nC
2008-04-10