ipp08cn10ng Infineon Technologies Corporation, ipp08cn10ng Datasheet
ipp08cn10ng
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ipp08cn10ng Summary of contents
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OptiMOS ® 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 200 160 120 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 350 10 V 300 250 200 150 6 V 100 5 4 Typ. ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS 115 110 105 100 ...
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PG-TO220-3: Outline Rev. 1.05 IPI08CN10N G page 8 IPB08CN10N G IPP08CN10N G 2007-08-29 ...
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Rev. 1.05 IPI08CN10N G page 9 IPB08CN10N G IPP08CN10N G 2007-08-29 ...
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PG-TO-263 (D²-Pak) Rev. 1.05 IPI08CN10N G page 10 IPB08CN10N G IPP08CN10N G 2007-08-29 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...
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Rev. 1.05 page 12 2007-08-29 ...
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Rev. 1.05 page 13 2007-08-29 ...
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Rev. 1.05 page 14 2007-08-29 ...