ipp070n06ng Infineon Technologies Corporation, ipp070n06ng Datasheet
ipp070n06ng
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ipp070n06ng Summary of contents
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OptiMOS Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPB070N06N G Type Package IPB066N06N G Package ...
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Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 300 250 200 150 100 Safe operating area =25 ° =f parameter limited by on-state ...
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Typ. output characteristics =f(V =25 ° parameter 240 10 V 220 7 V 200 180 160 140 120 100 Typ. transfer characteristics I ...
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Drain-source on-state resistance = =f(T DS(on -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =f(t = parameter: T j(start 150 ° Drain-source breakdown voltage =f BR(DSS ...
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PG-TO-263-3 (D²-Pak) Rev. 1.2 IPB070N06N G page 8 IPP070N06N G IPI070N06N G 2007-09-13 ...
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PG-TO220-3: Outline Rev. 1.2 IPB070N06N G page 9 IPP070N06N G IPI070N06N G 2007-09-13 ...
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PG-TO262-3: Outline Rev. 1.2 IPB070N06N G page 10 IPP070N06N G IPI070N06N G 2007-09-13 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...