ipp070n06ng Infineon Technologies Corporation, ipp070n06ng Datasheet

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ipp070n06ng

Manufacturer Part Number
ipp070n06ng
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP070N06NG
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.2
1)
2)
Features
• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Type
IPB066N06N G
Package
IPP066N06N G
Marking
See figure 3
Current is limited by bondwire; with an R
®
Power-Transistor
IPB070N06N G
PG-TO263-3
070N06N
j
Package
P-TO263-3-2
P-TO220-3-1
=25 °C, unless otherwise specified
thJC
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
=0.6 K/W the chip is able to carry 127 A.
, T
IPP070N06N G
PG-TO220-3
070N06N
Marking
066N06N
066N06N
stg
T
T
T
I
I
di /dt =200 A/μs,
T
T
D
D
page 1
C
C
C
j,max
C
=80 A, R
=80 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
1)
2)
DS
GS
=48 V,
=25
Product Summary
V
R
I
D
DS
IPI070N06N G
PG-TO262-3
070N06N
DS(on),max SMDversion
IPB070N06N G
-55 ... 175
55/175/56
Value
320
530
±20
250
80
80
6
IPP070N06N G
IPI070N06N G
6.7
60
80
Unit
A
mJ
kV/μs
V
W
°C
V
m
A
2007-09-13

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ipp070n06ng Summary of contents

Page 1

OptiMOS Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPB070N06N G Type Package IPB066N06N G Package ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 300 250 200 150 100 Safe operating area =25 ° =f parameter limited by on-state ...

Page 5

Typ. output characteristics =f(V =25 ° parameter 240 10 V 220 7 V 200 180 160 140 120 100 Typ. transfer characteristics I ...

Page 6

Drain-source on-state resistance = =f(T DS(on -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =f(t = parameter: T j(start 150 ° Drain-source breakdown voltage =f BR(DSS ...

Page 8

PG-TO-263-3 (D²-Pak) Rev. 1.2 IPB070N06N G page 8 IPP070N06N G IPI070N06N G 2007-09-13 ...

Page 9

PG-TO220-3: Outline Rev. 1.2 IPB070N06N G page 9 IPP070N06N G IPI070N06N G 2007-09-13 ...

Page 10

PG-TO262-3: Outline Rev. 1.2 IPB070N06N G page 10 IPP070N06N G IPI070N06N G 2007-09-13 ...

Page 11

Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...

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