spd50n03s2-07g Infineon Technologies Corporation, spd50n03s2-07g Datasheet - Page 3
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spd50n03s2-07g
Manufacturer Part Number
spd50n03s2-07g
Description
Optimos? Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.SPD50N03S2-07G.pdf
(9 pages)
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
I
V
t
Q
g
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
gs
gd
g
(plateau) V
rr
Page 3
T
V
V
di
V
I
V
f=1MHz
V
I
R
V
V
V
D
D
C
DS
GS
DD
G
DD
DD
GS
DD
GS
R
F
=50A
=50A,
=25°C
/dt=100A/µs
=15V, I
=6.8Ω
=0V, I
≥2*I
=0V, V
=0 to 10V
=15V, V
=24V, I
=24V, I
=24V, I
Conditions
D
*R
F
F =
DS
=50A
D
D
D
DS(on)max
GS
l
S
=50A
=50A,
=50A
=25V,
,
=10V,
,
min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SPD50N03S2-07 G
Values
1630
14.1
typ.
750
150
0.9
7.9
5.2
41
46
60
14
36
27
25
35
-
-
02-09-2008
max.
2170 pF
1000
10.5
21.1
46.5
200
230
1.3
50
51
58
21
54
40
38
-
-
A
V
ns
nC
Unit
S
ns
nC
V