sch2830 Sanyo Semiconductor Corporation, sch2830 Datasheet

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sch2830

Manufacturer Part Number
sch2830
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
sch2830-S-TL-E
Manufacturer:
Sanyo
Quantity:
11 236
Ordering number : ENA0861
SCH2830
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Marking : XF
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
[SBD]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Short reverse recovery time.
Low forward voltage.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
V RRM
V RSM
V GSS
V DSS
Tstg
I DP
Tch
P D
I D
I O
SANYO Semiconductors
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
Mounted in Cu-foiled area of 0.72mm
on glass epoxy board
SCH2830
Conditions
2
2
2
✕0.03mm
✕0.8mm) 1unit
✕0.8mm)
DATA SHEET
62707PE TI IM TC-0000761
Ratings
--55 to +125
Continued on next page.
±10
150
--20
0.6
0.7
0.5
30
30
--1
--4
No. A0861-1/6
Unit
°C
°C
W
V
V
A
A
V
V
A
A

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sch2830 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH2830 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...

Page 2

... Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 SCH2830 Symbol Conditions I FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V -1mA  ...

Page 3

... Drain-to-Source Voltage (on 1000 900 --0.5A 800 --0.3A 700 --0.1A 600 500 400 300 200 100 0 0 --2 --4 Gate-to-Source Voltage SCH2830 t rr Test Circuit [SBD] Duty≤10% 50Ω V OUT 10µs [MOSFET] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.6 --0.7 --0.8 --0.9 --1.0 IT03501 [MOSFET] 1000 Ta=25°C --6 --8 IT12362 100Ω ...

Page 4

... Drain Current --4 --10V --1A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.2 0.4 0.6 0.8 1.0 Total Gate Charge 0.8 0.6 0.4 0 100 Ambient Temperature °C SCH2830 [MOSFET] -- --10V --1 --0 --0. --0.4 --0.5 --1.0 IT03505 [MOSFET 100 --2 ...

Page 5

... Sine wave θ=180° 0.1 0.2 0.3 0.4 Average Output Current FSM -- t 3.5 Current waveform 50Hz sine wave 3 2.5 2.0 1.5 1 Time SCH2830 [SBD 10000 1000 100 1.0 0 0.5 0.6 IT07927 [SBD] ...

Page 6

... Note on usage : Since the SCH2830 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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