ntf6p02 ON Semiconductor, ntf6p02 Datasheet
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ntf6p02
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ntf6p02 Summary of contents
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... Gate Drain Source A = Assembly Location WW = Work Week 6P02 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping SOT-223 4000/Tape & Reel 4000/Tape & Reel SOT-223 (Pb-Free) Publication Order Number: NTF6P02T3/D ...
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... Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (I Reverse Recovery Time Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures. NTF6P02T3 (T = 25°C unless otherwise noted -16 Vdc ...
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... GATE-TO-SOURCE VOLTAGE (VOLTS) GS, Figure 3. On-Resistance versus Gate-to-Source Voltage 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTF6P02T3 25°C J ≥ - 0.5 -V GS, Figure 2. Transfer Characteristics 0. 25° ...
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... -3 -4 d(off) 100 d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance NTF6P02T3 25° Drain-to-Source Voltage versus Total Charge 25° ...
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... TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 NTF6P02T3 NORMALIZED TO R 0.0175 W 0.0710 W CHIP JUNCTION 0.0154 F 0.0854 F 1.0E+00 1.0E+01 t, TIME (s) Figure 11. FET Thermal Response http://onsemi.com 5 AT STEADY STATE (1″ PAD) qJA 0.2706 W 0.5779 W 0.7086 W 0.3074 F 1.7891 F 107.55 F AMBIENT 1.0E+02 1.0E+03 ...
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... DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTF6P02T3/D 10° ...