ipd640n06lg Infineon Technologies Corporation, ipd640n06lg Datasheet
ipd640n06lg
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ipd640n06lg Summary of contents
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OptiMOS ® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPD640N06L G Type Type Package PG-TO252-3 IPD640N06L G ...
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Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f ≥6 V tot Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f |>2 DS(on)max ...
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Drain-source on-state resistance =10 V DS(on 160 140 120 100 -60 - Typ. capacitances C =f ...
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Avalanche characteristics parameter: T j(start) 100 10 150 ° Drain-source breakdown voltage V =f BR(DSS ...
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PG-TO252-3: Outline packaging: Rev. 1.2 page 8 IPD640N06L G 2006-03-27 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With ...