ipd034n06n3g Infineon Technologies Corporation, ipd034n06n3g Datasheet
ipd034n06n3g
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ipd034n06n3g Summary of contents
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Type OptiMOS (TM) 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • N-channel, normal level • 100% ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 200 150 100 Safe operating area I =f =25 ° parameter limited by on-state resistance ...
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Typ. output characteristics I =f =25 ° parameter 400 300 200 6 V 5.5 V 100 Typ. transfer ...
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Drain-source on-state resistance R =f =100 A; V DS(on max -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start 150 ° Drain-source breakdown voltage V =f BR(DSS) j ...
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PG-TO252-3 Rev. 2.0 page 8 IPD034N06N3 G 2008-12-11 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...