ipd038n06n3g Infineon Technologies Corporation, ipd038n06n3g Datasheet - Page 2

• Manufacturer Part Number: ipd038n06n3g
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.1.01
4)
connection. PCB is vertical in still air.
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
|V
I
D
page 2
C
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=125 °C
=90 A
DS
=25 °C
=V
=60 V, V
=60 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=1 mA
D
=90 µA
GS
GS
DS
DS(on)max
=90 A
=0 V,
=0 V,
=0 V
4)
,
min.
60
60
2
-
-
-
-
-
-
-
-
-55 ... 175
55/175/56
Values
Value
188
typ.
120
0.1
3.1
1.3
10
10
3
-
-
-
-
IPD038N06N3 G
max.
100
100
0.8
3.8
75
50
4
1
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
m
S
2008-02-14