ntd5n50 ON Semiconductor, ntd5n50 Datasheet - Page 2

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ntd5n50

Manufacturer Part Number
ntd5n50
Description
Power Mosfet 5 Amps, 500 Volts
Manufacturer
ON Semiconductor
Datasheet
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2.)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3.)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Collector Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance (V
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage (Note 2.)
Reverse Recovery Time
Reverse Recovery Stored
(V
Temperature Coefficient (Positive)
(V
(V
I
Temperature Coefficient (Negative)
(V
(V
Charge
D
GS
DS
DS
GS
GS
= 0.25 mA, V
= 0 Vdc, I
= 500 Vdc, V
= 500 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
D
DS
D
D
= 0.25 mAdc)
= 2.5 Adc)
= 5 Adc, T
GS
GS
= V
= 0 Vdc)
= 0 Vdc, T
GS
Characteristic
DS
J
GS
= 125°C)
= 15 Vdc, I
J
(I
= ± 20 Vdc, V
= 125°C)
S
= 5 Adc, V
(V
(V
(V
(T
(I
(I
DS
DD
DS
C
GS
S
S
= 25°C unless otherwise noted)
= 5 Adc, V
= 5 Adc, V
D
= 25 Vdc, V
di
= 250 Vdc, I
= 400 Vdc, I
= 10 Vdc, I
= 2.5 Adc)
V
V
S
f = 1.0 MHz)
R
/dt = 100 A/μs)
GS
GS
DS
GS
G
= 0)
= 10 Vdc,
= 10 Vdc)
= 9.1 Ω)
= 0 Vdc, T
GS
GS
D
GS
http://onsemi.com
D
D
= 0 Vdc)
= 0 Vdc,
= 2.5 Adc)
= 5 Adc,
= 5 Adc,
= 0 Vdc,
J
= 125°C)
2
V
Symbol
R
V
V
I
I
(BR)DSS
GSS(f)
GSS(r)
t
t
C
I
DS(on)
DS(on)
Q
GS(th)
C
C
V
g
d(on)
d(off)
DSS
Q
Q
Q
Q
t
t
t
FS
oss
t
t
rss
SD
RR
iss
rr
a
b
r
f
T
1
2
3
Min
500
2.0
2.0
1300
Typ
590
520
170
415
100
315
2.7
6.4
4.0
7.0
9.0
2.0
3.0
5.0
0.9
0.8
1.8
11
20
10
10
1700
Max
10.2
100
100
100
730
240
4.0
8.9
1.0
10
20
10
20
40
20
20
mV/°C
mV/°C
mhos
μAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
μC
pF
ns
ns

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