ntd4856n ON Semiconductor, ntd4856n Datasheet - Page 3

• Manufacturer Part Number: ntd4856n
• Description: Power Mosfet 25 V, 89 A, Single N-channel, Dpak/ipak
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
V
Q
t
R
L
L
L
L
RR
t
t
SD
a
b
RR
G
S
D
D
G
http://onsemi.com
NTD4856N
V
GS
V
I
3
GS
S
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
0.0164
0.87
0.72
18.7
2.49
1.88
3.46
Typ
9.3
9.4
0.6
8.0
Max
1.2
Unit
nH
ns
nC
W
V