stq1hnc60 STMicroelectronics, stq1hnc60 Datasheet
stq1hnc60
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stq1hnc60 Summary of contents
Page 1
... August 2001 N-CHANNEL 600V - 7 - 0.4A TO-92 PowerMesh™II MOSFET I D 0.4 A INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° C (1)I 0.4 A, di/dt 100A/µ STQ1HNC60 PRELIMINARY DATA TO-92 Value Unit 600 V 600 V ± 0.4 A 0.25 A 1.6 A 3.5 W 0.028 W/° ...
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... STQ1HNC60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max (Surface Mounted) T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...
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... 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 0 1.4 A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) STQ1HNC60 Typ. Max. Unit 8.5 11.5 nC 2.8 nC 2.8 nC Typ. Max. Unit Typ. Max. ...
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... STQ1HNC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... TO-92 MECHANICAL DATA mm DIM. MIN. TYP. A 4.58 B 4.45 C 3.2 D 12.7 E 1.27 F 0.4 G 0.35 inch MAX. MIN. TYP. 5.33 0.180 5.2 0.175 4.2 0.126 0.500 0.050 0.51 0.016 0.14 STQ1HNC60 MAX. 0.210 0.204 0.165 0.020 5/6 ...
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... STQ1HNC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...