psmg60-08 Power Semiconductors, Inc., psmg60-08 Datasheet - Page 2

• Manufacturer Part Number: psmg60-08
• Description: Mosfet Module
• Manufacturer: Power Semiconductors, Inc.

Symbol
C
C
C
t
t
t
t
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Package style and preliminary
outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
S
SM
RM
d(on)
r
d(off)
f
rr
SD
iss
oss
rss
thJC
thCK
RM
Test Conditions
V
V
f = 1 MHz
V
V
Test Conditions
V
repetitive
pulse width limited by T
I
pulse test, t
I
-di/dt = 100 A/µs,
V
I
R
F
F
D
GS
DS
GS
DS
GS
R
= I
= I
G
= 0.5 . I
= 100 V
= 1
= 0 V,
= 25 V,
= 10 V,
= 0.5 . V
= 0 V
S
S
, V
,
GS
(External)
D25
= 0 V
300 µs, duty cycle d 2 %
DSS
,
T
T
T
J
J
J
= 25 °C
=125 °C
= 25 °C
(T
(T
JM
J
J
= 25 °C, unless otherwise specified)
= 25 °C, unless otherwise specified)
typ.
typ.
typ.
typ.
typ.
typ.
typ.
max.
max.
max.
max.
max.
typ.
typ.
Characteristic Values
Characteristic Values
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Characteristic pin configuration;
changes of the pin configuration
is reserved.
15000
1840
0.45
0.60
440
100
136
250
400
1.5
1.4
45
45
40
34
10
ATTENTION: All given data are derived from similar
modules or estimated from chip data.
K/W
K/W
µC
pF
pF
pF
ns
ns
ns
ns
ns
ns
A
A
V
A
ECO-PAC
TM
2